參數(shù)資料
型號: FDD5614P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 60V P-Channel PowerTrench MOSFET
中文描述: 15 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: TO-252, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 81K
代理商: FDD5614P
February 2001
2001 Fairchild Semiconductor Corporation
FDD5614P Rev C(W)
FDD5614P
60V P-Channel PowerTrench
MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
DC/DC converter
Power management
Load switch
Features
–15 A, –60 V. R
DS(ON)
= 100 m
@ V
GS
= –10 V
R
DS(ON)
= 130 m
@ V
GS
= –4.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–60
±
20
15
45
42
3.8
1.6
55 to +175
Units
V
V
A
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
3.5
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD5614P
FDD5614P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDD5670 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube