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參數(shù)資料
| 型號： | FDD5202P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel, Logic Level, MOSFET |
| 中文描述： | 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 59K |
| 代理商： | FDD5202P |
F
FDD5202P, Rev. A
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V
GS
= 0 V, I
D
= -250
μ
A
-60
V
BV
DSS
T
J
I
DSS
I
D
= -250
μ
A, Referenced to 25
°
C
-60
mV/
°
C
V
DS
= -48 V, V
GS
= 0 V
-1
μ
A
I
GSSF
V
GS
= 20V, V
DS
= 0 V
100
nA
I
GSSR
V
GS
= -20 V, V
DS
= 0 V
-100
nA
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= -250
μ
A
I
D
= -250
μ
A, Referenced to 25
°
C
-2
-2.3
3.2
-4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= -10 V, I
D
= -2.3 A
V
GS
= -10 V, I
D
= -2.3 A,T
J
=125
°
C
V
GS
= -4.5 V, I
D
= -1.8 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -5 V, I
D
= -2.3 A
0.205
0.340
0.313
0.300
0.510
0.500
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
-10
A
S
3
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
560
130
35
pF
pF
pF
V
DS
= -30 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
8
20
20
5
15.5
2.4
4.7
15
40
40
20
22
ns
ns
ns
ns
nC
nC
nC
V
DD
= -30 V, I
D
= -1 A,
V
GS
= -10 V, R
GEN
= 6
V
DS
= -30 V, I
D
= -2.3 A,
V
GS
= -10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward
Voltage
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
-2.2
-1.3
A
V
V
GS
= 0 V, I
S
= -2.2 A
(Note 2)
-1
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) R
θ
JA
= 45oC/W when mounted
on a 1in2 pad of 2oz copper.
b) R
θ
JA
= 96oC/W when mounted on
a 0.076 in2 pad of 2oz copper.
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