參數(shù)資料
型號(hào): FDD5670
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 60V N-Channel PowerTrenchTM MOSFET
中文描述: 21 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁數(shù): 1/5頁
文件大?。?/td> 106K
代理商: FDD5670
F
FDD5670 Rev. A
FDD5670
60V N-Channel PowerTrench
TM
MOSFET
Features
48 A, 60 V. R
DS(ON)
= 0.015
@ V
GS
= 10 V
R
DS(ON)
= 0.018
@ V
GS
= 6 V.
Low gate charge.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON
)
.
1999 Fairchild Semiconductor Corporation
March 1999
ADVANCE INFORMATION
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
C
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
60
±
20
48
10
100
70
2.8
1.3
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current -Continuous
(Note 1)
(Note 1a)
Maximum Drain Current -Pulsed
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
T
A
= 25
o
C
(Note 1a)
T
A
= 25
o
C
(Note 1b)
Operating and Storage Junction Temperature Range
P
D
W
T
J
, T
stg
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to- Case
(Note 1)
R
θ
JA
Thermal Resistance, Junction-to- Ambient
(Note 1b)
1.8
96
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD5670
FDD5670
13’’
16mm
2500
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
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