參數(shù)資料
型號: FDD5680
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel, PowerTrench⑩ MOSFET
中文描述: 38 A, 60 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: TO-252, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 83K
代理商: FDD5680
F
FDD5680, Rev. C
FDD5680
N-Channel, PowerTrench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
DC/DC converter
Motor drives
July 2000
Features
38 A, 60 V. R
DS(on)
= 0.021
@ V
GS
= 10 V
R
DS(on)
= 0.025
@ V
GS
= 6 V.
Low gate charge (33nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(on)
.
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
60
±
20
38
8.5
100
60
2.8
1.3
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Maximun Drain Current - Continuous
(Note 1)
(Note 1a)
Maximum Drain Current
Maximum Power Dissipation @ T
C
= 25
o
C
(Note 1)
T
A
= 25
o
C
(Note 1a)
T
A
= 25
o
C
(Note 1b)
Operating and Storage Junction Temperature Range
- Pulsed
P
D
W
T
J
, T
stg
°
C
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to- Case
(Note 1)
Thermal Resistance, Junction-to- Ambient
(Note 1b)
2.1
96
°
C/W
°
C/W
Package Marking and Ordering Information
Device Marking
Device
FDD5680
FDD5680
Reel Size
13’’
Tape width
16mm
Quantity
2500
G
S
D
TO-252
S
D
G
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