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參數(shù)資料
| 型號： | FDD4141 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.5 to 3.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 50 A, 40 V, 0.0187 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, TO-252, D-PAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 244K |
| 代理商： | FDD4141 |
F
www.fairchildsemi.com
3
2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
20
40
60
80
100
V
GS
= -4V
V
GS
= -10V
V
GS
= -3V
V
GS
= -3.5V
V
GS
=
-4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
20
40
60
80
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= -4V
V
GS
= -3.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-
I
D
,
DRAIN CURRENT(A)
V
GS
= -4.5V
V
GS
= -3V
V
GS
=
-10V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-75
-50
-25
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= -12.7A
V
GS
= -10V
N
Figure 4.
2
4
6
8
10
5
15
25
35
45
55
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -12.7A
r
D
,
D
S
(
m
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
0
20
40
60
80
100
V
DS
= -5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-3
0.01
0.1
1
10
100
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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