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參數(shù)資料
| 型號： | FDD45AN06LA0 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 22A, 45m |
| 中文描述： | 5.2 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | TO-252AA, 3 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 228K |
| 代理商： | FDD45AN06LA0 |
2004 Fairchild Semiconductor Corporation
February 2004
FDD45AN06LA0 Rev. A
F
FDD45AN06LA0
N-Channel PowerTrench
MOSFET
60V, 22A, 45m
Features
r
DS(ON)
= 39m
(Typ.), V
GS
= 5V, I
D
= 22A
Q
g
(tot) = 8.3nC (Typ.), V
GS
= 5V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 83535
Applications
Motor / Body Load Control
ABS Systems
Powertrain Management
Injection Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 12V and 24V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certificatio
n.
Symbol
V
DSS
V
GS
Parameter
Ratings
60
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 5V)
Continuous (T
C
= 100
o
C, V
GS
= 5V)
Continuous (T
A
= 25
o
C, V
GS
= 5V, R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
25
22
16
5.2
A
A
A
A
A
Figure 4
15
55
0.37
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.73
100
52
o
C/W
o
C/W
o
C/W
D
G
S
GATE
SOURCE
DRAIN (FLANGE)
TO-252AA
FDD SERIES
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| FDD4685_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -32A, 35mΩ |
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