參數(shù)資料
型號: FDD4141
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.5 to 3.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: 50 A, 40 V, 0.0187 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: ROHS COMPLIANT, TO-252, D-PAK-3
文件頁數(shù): 1/6頁
文件大小: 244K
代理商: FDD4141
tm
July 2007
2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
www.fairchildsemi.com
1
F
FDD4141
P-Channel PowerTrench
MOSFET
-40V, -50A, 12.3m
Features
Max r
DS(on)
= 12.3m
at V
GS
= -10V, I
D
= -12.7A
Max r
DS(on)
= 18.0m
at V
GS
= -4.5V, I
D
= -10.4A
High performance trench technology for extremely low r
DS(on)
RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
technology to
deliver low r
DS(on)
and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
Applications
Inverter
Power Supplies
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-40
±20
-50
-58
-10.8
-100
337
69
2.4
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
1.8
52
°C/W
Device Marking
FDD4141
Device
FDD4141
Package
D-PAK (TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
G
S
D
D-PAK
(TO-252)
S
G
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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