- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375771 > FDD4243 (FAIRCHILD SEMICONDUCTOR CORP) 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm PDF資料下載
參數(shù)資料
| 型號： | FDD4243 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 40V P-Channel PowerTrench MOSFET -40V, -14A, 44mohm |
| 中文描述： | 6.7 A, 40 V, 0.064 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT, DPAK, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 383K |
| 代理商： | FDD4243 |
November 2006
F
M
2006 Fairchild Semiconductor Corporation
FDD4243 Rev.C
www.fairchildsemi.com
1
FDD4243
40V P-Channel PowerTrench
MOSFET
-
40V,
-
14A, 44m
Features
Max r
DS(on)
= 44m
at V
GS
= -10V, I
D
= -6.7A
Max r
DS(on)
= 64m
at V
GS
= -4.5V, I
D
= -5.5A
High performance trench technology for extremely low r
DS(on)
RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
technology to
deliver low r
DS(on)
and optimized Bvdss capability to offer
superior performance benefit in the applications.
Application
Inverter
Power Supplies
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-
40
±20
-
14
-
24
-
6.7
-60
84
42
3
-
55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited)
T
C
= 25°C
(Note 1)
-Continuous
T
A
= 25°C
(Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
3.0
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
40
Device Marking
FDD4243
Device
FDD4243
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
G
S
D
D-PAK
(TO-252)
S
G
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDD45AN06LA0 | N-Channel PowerTrench MOSFET 60V, 22A, 45m |
| FDD4685 | 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm |
| FDD5202P | P-Channel, Logic Level, MOSFET |
| FDD5612 | 2MM SOCKET STRIPS |
| FDD5614 | 60V P-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD4243_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:40V P-Channel PowerTrench㈢ MOSFET |
| FDD4243_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -40V, -14A, 64m?? |
| FDD4243_F085 | 功能描述:MOSFET Trans MOS P-Ch 40V 6.7A 3-Pin 2+Tab RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD4505C | 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component |
| FDD45AN06LA0 | 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。