參數資料
型號: FDD4685
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 40V P-Channel PowerTrench MOSFET -40V -32A 27m ohm
中文描述: 8.4 A, 40 V, 0.042 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁數: 1/6頁
文件大?。?/td> 366K
代理商: FDD4685
tm
October 2006
F
M
2006 Fairchild Semiconductor Corporation
FDD4685 Rev.B
www.fairchildsemi.com
1
FDD4685
40V P-Channel PowerTrench
MOSFET
40V,
32A, 27m
Features
Max r
DS(on)
= 27m
at V
GS
= –10V, I
D
= –8.4A
Max r
DS(on)
= 35m
at V
GS
= –4.5V, I
D
= –7A
High performance trench technology for extremely low r
DS(on)
RoHS Compliant
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
technology to
deliver low r
DS(on)
and good switching characteristic offering
superior performance in application.
Application
Inverter
Power Supplies
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
–40
±20
–32
–40
–8.4
–100
121
69
3
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous(Package Limited) T
C
= 25°C
-Continuous(Silicon Limited) T
C
= 25°C (Note 1)
-Continuous
T
A
= 25°C
(Note 1a)
-Pulsed
Drain-Source Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°
C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
1.8
°C/W
Thermal Resistance, Junction to Ambient (Note 1a)
40
Device Marking
FDD4685
Device
FDD4685
Package
D-PAK(TO-252)
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
G
S
D
D-PAK
(TO-252)
S
G
D
相關PDF資料
PDF描述
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FDD5670 60V N-Channel PowerTrenchTM MOSFET
相關代理商/技術參數
參數描述
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FDD4N60NZ 功能描述:MOSFET 2.5A Output Current GateDrive Optocopler RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube