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參數(shù)資料
| 型號： | FDD306P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 6.7 A, 12 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 505K |
| 代理商： | FDD306P |
2
www.fairchildsemi.com
FDD306P Rev. C
F
Notes:
1. R
R
θ
θ
JA
JC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
= 40°C/W when mounted
on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
3. Maximum current is calculated as: -----------------------
D
is maximum power dissipation at T
C
= 25°C and R
DS(on)
is at T
J(max)
and V
GS
= 10V.
4. Starting T
J
= 25°C, L = TBD, I
AS
= -6.7A
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV
DSS
BV
T
Drain–Source Breakdown Voltage
V
GS
= –250
= 0 V, I
D
A, Referenced to 25
= –250
μ
A
–12
V
DSS
J
Breakdown Voltage Temperature Coefficient
I
D
μ
°
C
–0.6
mV/
°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –10 V, V
GS
= 0 V
= 0 V
–1
μ
A
I
GSSF
On Characteristics
Gate–Body Leakage
V
GS
=
±
8V, V
DS
±
100
nA
(Note 2)
V
GS(th)
V
GS(th)
T
Gate Threshold Voltage
V
DS
= –250
= V
GS
, I
D
= –250
μ
A
–0.4
–0.5
–1.5
V
J
Gate Threshold Voltage
Temperature Coefficient
I
D
μ
A, Referenced to 25
°
C
2.2
mV/
°
C
R
DS(on)
Static Drain–Source
On–Resistance
V
V
V
V
GS
GS
GS
GS
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, I
D
D
D
D
= –6.7 A
= –6.1 A
= –4.8 A
= –6.7A, T
J
= 125
°
C
21
29
42
25
28
41
90
m
I
D(on)
g
FS
Dynamic Characteristics
On–State Drain Current
V
GS
= –4.5 V, V
DS
= –5 V
–45
A
Forward Transconductance
V
DS
= –5 V, I
D
= –6.7 A
22
S
C
iss
Input Capacitance
V
f = 1.0 MHz
DS
= –6 V, V
GS
= 0 V,
1290
pF
C
oss
Output Capacitance
590
pF
C
rss
Reverse Transfer Capacitance
430
pF
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
4.2
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
V
V
DD
GS
= –6 V, I
= –4.5 V, R
D
= –1 A,
GEN
= 6
16
29
ns
t
r
Turn–On Rise Time
8
16
ns
t
d(off)
Turn–Off Delay Time
34
54
ns
t
f
Turn–Off Fall Time
41
65
ns
Q
g
Total Gate Charge
V
V
DS
GS
= –6V, I
= –4.5 V
D
= –6.7 A,
15
21
nC
Q
gs
Gate–Source Charge
2.0
nC
Q
gd
Gate–Drain Charge
4.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
–3.2
A
V
SD
Trr
Drain–Source Diode Forward Voltage
V
GS
= 0 V, I
S
= –3.2 A (Note 2)
IF = –6.7 A,
diF/dt = 100 A/μs (Note 3)
–0.8
–1.2
V
Diode Reverse Recovery Time
37
ns
Irm
Diode Reverse Recovery Current
0.9
A
Qrr
Diode Reverse Recovery Charge
17
nC
b) R
= 96°C/W when mounted on a
minimum pad.
R
DS ON
)
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