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參數(shù)資料
| 型號： | FDD3670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO |
| 中文描述： | 34 A, 100 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 167K |
| 代理商： | FDD3670 |
January 2000
ADVANCE INFORMATION
2000 Fairchild Semiconductor Corporation
FDD3670 Rev A(W)
FDD3670
100V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
34 A, 100 V.
R
DS(ON)
= 0.030
@ V
GS
= 10 V
R
DS(ON)
= 0.033
@ V
GS
= 6 V
Low gate charge (57 nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
Drain Current
– Pulsed
Maximum Power Dissipation @ T
C
= 25
°
C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
100
±
20
34
100
70
3.2
1.3
-55 to +150
Units
V
V
A
(Note 1)
(Note 1)
@ T
A
= 25
°
C
@ T
A
= 25
°
C
(Note 1a)
P
D
(Note 1b)
W
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
96
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD3670
FDD3670
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDD3670_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
| FDD3672 | 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3672_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench? MOSFET -40V, -14A, 64mΩ |
| FDD3672_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ |
| FDD3672_F085 | 功能描述:MOSFET 100V NChannel UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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