參數(shù)資料
型號(hào): FDD3680
廠(chǎng)商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: FAST SWITCHING DIODE_1N4148_SOD-323__
中文描述: 25 A, 100 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: DPAK-3
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 75K
代理商: FDD3680
February 2001
2001 Fairchild Semiconductor Corporation
FDD3680 Rev B1(W)
FDD3680
100V N-Channel PowerTrench
ò
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
25 A, 100 V.
R
DS(ON)
= 46 m
@ V
GS
= 10 V
R
DS(ON)
= 51 m
@ V
GS
= 6 V
Low gate charge (38 nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability.
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
Drain Current
– Pulsed
Maximum Power Dissipation
Ratings
100
±
20
25
100
68
3.8
1.6
–55 to +175
Units
V
V
A
(Note 1)
(Note 1)
(Note 1a)
P
D
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
2.2
96
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD3680
FDD3680
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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