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參數資料
| 型號： | FDD3570 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 80V N-Channel PowerTrench MOSFET |
| 中文描述： | 43 A, 80 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 219K |
| 代理商： | FDD3570 |
February 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDD3570 Rev BW)
FDD3570
80V N-Channel PowerTrench
MOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
This MOSFET features faster switching and lower gate
change than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
10 A, 80 V.
R
DS(ON)
= 0.019
@ V
GS
= 10 V
R
DS(ON)
= 0.022
@ V
GS
= 6 V.
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
Symbol
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
Maximum Drain Current-Continuous
I
D
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
80
±
20
43
10
110
69
3.4
1.3
-55 to +150
Units
V
V
A
(Note 1)
(Note 1a)
Maximum Drain Current – Pulsed
Maximum Power Dissipation @T
C
= 25
o
C
(Note 1)
T
A
= 25
o
C
T
A
= 25
o
C
(Note 1a)
P
D
(Note 1b)
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to- Case
R
θ
JA
Thermal Resistance, Junction-to- Ambient
(Note 1)
1.8
37
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD3570
FDD3570
13’’
16mm
2500
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD3570_0011 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:80V N-Channel PowerTrench MOSFET |
| FDD3580 | 功能描述:MOSFET 80V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3670 | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3670_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V N-Channel PowerTrench MOSFET |
| FDD3672 | 功能描述:MOSFET 100V 44a .28 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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