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參數(shù)資料
| 型號： | FDC6432SH |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET |
| 中文描述： | 2400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | FDC6432SH |
FDC6432SH Rev B (W)
Typical Characteristics : Q2
0
1
2
3
4
5
6
7
8
0
0.5
1
1.5
2
2.5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
= -4.5V
-3.5V
-3.0V
-1.8V
-2.0V
-2.5V
-1.5V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
1
2
3
4
5
6
7
8
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-1.8V
-3.0V
-2.5V
-3.5V
-4.5V
-2.0V
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= -2.5A
V
GS
= -4.5V
0.05
0.09
0.13
0.17
0.21
0.25
0.29
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= -1.3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 14. On-Resistance Variation with
Temperature.
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
0
1
2
3
4
5
6
7
8
0.5
1
1.5
2
2.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC645 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N | 功能描述:MOSFET SSOT-6 N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC645N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC645N_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N_F095 | 功能描述:MOSFET 30V 5.5A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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