參數(shù)資料
型號: FDC645N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel PowerTrench MOSFET
中文描述: 5.5 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SUPERSOT-6
文件頁數(shù): 1/8頁
文件大?。?/td> 313K
代理商: FDC645N
July 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDC645N Rev B(W)
FDC645N
N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Features
5.5 A, 30 V.
R
DS(ON)
= 30 m
@ V
GS
= 4.5 V
R
DS(ON)
= 26 m
@ V
GS
= 10 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge (13 nC typical)
High power and current handling capability
D
D
D
S
D
G
SuperSOT -6
6
5
4
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
P
D
Ratings
30
±
12
5.5
20
1.6
0.8
-55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.645
FDC645N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC645N 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6
FDC645N_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET
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FDC645N-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC645N Series 30 V 26 mOhm N-Channel PowerTrench Mosfet - SSOT-6
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