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參數(shù)資料
| 型號： | FDC6432SH |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET |
| 中文描述： | 2400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | FDC6432SH |
April 2003
2003 Fairchild Semiconductor Corp.
FDC6432SH Rev B (W)
FDC6432SH
12V P-Channel PowerTrench
MOSFET,
30V PowerTrench
SyncFET
General Description
This
SyncFET has been designed specifically to improve the
overall efficiency of DC/DC converters using either
synchronous
or
conventional
controllers. It has been optimized for providing an
extremely low R
DS(ON)
in a small package.
complementary
P-Channel
MOSFET
with
switching
PWM
Applications
DC/DC converter
Power management
Features
SyncFET
2.4 A, 30V
R
DS(ON)
= 90 m
@ V
GS
= 10 V
R
DS(ON)
= 105 m
@ V
GS
= 4.5 V
P channel
–2.5 A, –12V
R
R
DS(ON)
= 220 m
@ V
GS
= –1.8 V
R
DS(ON)
= 90 m
@ V
GS
= –4.5 V
R
DS(ON)
= 125 m
@ V
GS
= –2.5 V
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
D1
S2
G1
D2
S1
G2
SuperSOT -6
Pin 1
SuperSOT-6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
Ratings
Units
Q1 (N)
30
±16
2.4
7
Q2 (P)
–12
±8
–2.5
–7
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current– Continuous
– Pulsed
Power Dissipation for Single Operation
V
V
A
(Note 1a)
(Note 1a)
1.3
0.7
P
D
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
–55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
100
175
60
°
C/W
(Note 1b)
R
θ
JC
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.432
FDC6432SH
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
3
2
1
4
5
6
Q1(N)
Q2(P)
D1,2
S1
D1,2
G2
S2
G1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC645 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N | 功能描述:MOSFET SSOT-6 N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC645N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC645N_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N_F095 | 功能描述:MOSFET 30V 5.5A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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