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參數(shù)資料
| 型號： | FDC653 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | FDC653 |
November 1997
FDC653N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol Parameter
FDC653N
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage - Continuous
±20
V
I
D
Drain Current - Continuous
(Note 1a)
5
A
- Pulsed
15
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
FDC653N Rev.C
This N-Channel enhancement mode power field effect
transistors is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage applications in notebook
computers, portable phones, PCMICA cards, and other
battery powered circuits where fast switching, and low in-line
power loss are needed in a very small outline surface mount
package.
5 A, 30 V. R
DS(ON)
= 0.035
@ V
GS
= 10 V
R
DS(ON)
= 0.055
@ V
GS
= 4.5 V.
Proprietary SuperSOT
TM
-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
3
5
6
4
1
2
D
D
D
S
D
G
SuperSOT -6
.653
pin
1
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC653N | N-Channel Enhancement Mode Field Effect Transistor |
| FDC654P | P-Channel Enhancement Mode Field Effect Transistor |
| FDC655BN | Single N-Channel, Logic Level, PowerTrench MOSFET |
| FDC655AN | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDC6561AN | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653N_F095 | 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC653N 30 V 0.035 Ohm N-Ch Enhancement Mode Field Effect Transistor - SSOT-6 |
| FDC654P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC654P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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