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FDC6432SH Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Q
Min
Typ
Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= 1 mA
I
D
= –250 μA
Q1
Q2
30
–12
V
BV
DSS
T
J
Breakdown Voltage
Temperature Coefficient
I
D
= 1 mA, Ref to 25°C
I
D
= –250 μA, Ref to 25°C
Q1
Q2
25
–10
mV/°C
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 24 V,
V
DS
= –10 V, V
GS
= 0 V
V
GS
= 0 V
Q1
Q2
500
1
μA
I
GSS
Gate-Body Leakage
V
GS
= ±16 V, V
DS
= 0 V
V
GS
= ±8 V,
V
DS
= 0 V
Q1
Q2
±100
±100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= 1 mA
I
D
= –250 μA
Q1
Q2
1
–0.4
1.5
–0.7
3
–1.5
V
V
GS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 1 mA, Ref to 25°C
I
D
= –250 μA, Ref to 25°C
Q1
Q2
–7
3
mV/°C
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10V,
V
GS
= 4.5V, I
D
= 2.2A
V
GS
=10V,I
D
=2.4A,T
J
=125°C
I
D
= 2.4A
Q1
75
85
100
90
105
140
m
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= –4.5V, I
D
= –2.5A
V
GS
= –2.5V, I
D
= –2.0A
V
GS
= –1.8V, I
D
= –1.6A
V
GS
=–4.5V,I
D
=2.5A,T
J
=125°C
V
DS
= 10 V,
V
DS
= –5 V
Q2
75
97
154
86
7
7
5
13
90
125
220
120
m
g
FS
Forward Transconductance
I
D
= 1 mA
I
D
= –2.5A
Q1
Q2
Q1
Q2
S
R
G
Gate Resistance
V
GS
= 15 mV, f = 1.0 MHz
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
270
514
50
234
20
167
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer Capacitance
For Q1:
V
DS
=15V, V
GS
=0V, f=1MHz
For Q2:
V
DS
= –6V, V
GS
=0V, f=1MHz
pF
Switching Characteristics
(Note 2)
td(on)
Turn-on Delay Time
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
5
13
8
12
18
22
1.2
29
2.5
5.7
0.7
1.2
0.6
1.7
10
23
16
22
32
35
2.4
46
3.5
8
ns
tr
Turn-on Rise Time
ns
td(off)
Turn-off Delay Time
ns
tf
Turn-off Fall Time
For Q1:
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
For Q2:
V
DS
= –10 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
ns
Qg
Total Gate Charge
nC
Qgs
Gate-Source Charge
nC
Qgd
Gate-Drain Charge
For Q1:
V
DS
= 15 V, I
D
= 2.4 A,
V
= 5 V
For Q2:
V
DS
= –10 V, I
D
= –2.5 A,
V
GS
= –4.5 V
nC
F
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDC645 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N | 功能描述:MOSFET SSOT-6 N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC645N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC645N_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N_F095 | 功能描述:MOSFET 30V 5.5A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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