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參數(shù)資料
| 型號： | FDC6506 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| 中文描述： | 雙P溝道邏輯電平的PowerTrench MOSFET的⑩ |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 204K |
| 代理商： | FDC6506 |
F
FDC6506P Rev. C
FDC6506P
Dual P-Channel Logic Level PowerTrench
MOSFET
February 1999
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
Parameter
Ratings
-30
±
20
-1.8
-10
0.96
0.9
0.7
-55 to +150
Units
V
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
P
D
Power Dissipation for Single Operation
(Note 1a)
W
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.
506
Device
FDC6506P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
5
6
4
2
3
1
General Description
These P-Channel logic level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
-1.8 A, -30 V. R
DS(on)
= 0.170
@ V
GS
= -10 V
R
DS(on)
= 0.280
@ V
GS
= -4.5 V
Low gate charge (2.3nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D1
S2
G1
D2
S1
G2
SuperSOT -6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC6506P | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| FDC653 | N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | N-Channel Enhancement Mode Field Effect Transistor |
| FDC654P | P-Channel Enhancement Mode Field Effect Transistor |
| FDC655BN | Single N-Channel, Logic Level, PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC6506P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6506P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
| FDC6506P_Q | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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