- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375769 > FDC638APZ (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm PDF資料下載
參數(shù)資料
| 型號(hào)： | FDC638APZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
| 中文描述： | 4.5 A, 20 V, 72 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT, 6 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 364K |
| 代理商： | FDC638APZ |
F
FDC638APZ Rev.B
www.fairchildsemi.com
4
Figure 7.
0
2
4
6
8
10
12
0
1
2
3
4
5
I
D
= -4.5A
V
DD
= -15V
V
DD
= -5V
-
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= -10V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
70
2000
20
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0
5
10
15
20
1E-5
1E-4
1E-3
0.01
0.1
1
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
g
,
-V
GS
, GATE TO SOURCE VOLTAGE(V)
Gate Leakage Current vs Gate to
Source Voltage
Figure 10.
0.1
1
10
0.01
0.1
1
10
100
50
100ms
10us
1s
DC
10ms
1ms
100us
r
DS(on)
LIMIT
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
O
C
-
D
,
-VDS, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
Figure 11. Single Pulse Maximum Power Di
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
10
20
30
40
50
SINGLE PULSE
R
θ
JA
= 156
T
A
=25
o
C/W
o
C
P
(
,
t, PULSE WIDTH (s)
SINGLE PULSE
ssipation
Figure 12. Transient Thermal Response Curve
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.001
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
N
I
θ
J
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
Typical Characteristics
T
J
= 25°C unless otherwise noted
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC638 | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC638P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| FDC6392S | 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| FDC6401N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDC640P | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC638P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC638P_Q | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。