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參數(shù)資料
| 型號(hào)： | FDC638APZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
| 中文描述： | 4.5 A, 20 V, 72 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT, 6 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 364K |
| 代理商： | FDC638APZ |
December 2006
F
2006 Fairchild Semiconductor Corporation
FDC638APZ Rev.B
www.fairchildsemi.com
1
FDC638APZ
P-Channel 2.5V PowerTrench
Specified MOSFET
–20V, –4.5A, 4
3
m
Features
Max r
DS(on)
= 4
3
m
at V
GS
= –4.5V, I
D
= –4.5A
Max r
DS(on)
= 6
8
m
at V
GS
= –2.5V, I
D
= –3.8A
Low gate charge (
8
nC typical).
High performance trench technology for extremely low r
DS(on).
SuperSOT
TM
–6 package:small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
RoHS Compliant
General Description
This P-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench
process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance
These devices are well suited for battery power applications:load
switching and power management,battery charging circuits,and
DC/DC conversion.
Application
DC - DC
Conversion
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
–20
±12
–4.5
–20
1.6
0.8
–55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Power Dissipation (Note 1a)
Power Dissipation (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
T
J
, T
STG
°
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to
Ambient
(Note 1a
) 7
8
Thermal Resistance, Junction to Ambient (Note 1b)
°C/W
156
Device Marking
.638Z
Device
FDC638APZ
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
SuperSOT
TM
-6
Pin 1
D
S
G
D
D
D
3
5
6
4
1
2
3
D
D
D
D
S
G
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| FDC6401N | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC638P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC638P_Q | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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