參數(shù)資料
型號(hào)： FDC638APZ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm
中文描述： 4.5 A, 20 V, 72 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SUPERSOT, 6 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 364K
代理商： FDC638APZ
F
FDC638APZ Rev.B
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I
D
= –250
μ
A, V
GS
= 0V
–20
V
I
D
= –250
μ
A, referenced to 25°C
–9.4
mV/°
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= –16V,
V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
–1
–10
±10
μ
A
T
J
= 55°C
I
GSS
Gate to Source Leakage Current
μ
A
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= –250
μ
A
–0.4
–0.8
–1.5
V
I
D
= –250
μ
A, referenced to 25°C
2.9
mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= –4.5V, I
D
= –4.5A
V
GS
= –2.5V, I
D
= –3.8A
V
GS
= –4.5V, I
D
= –4.5A, T
J
= 125°C
V
GS
= –10V, V
DS
= –4.5A
V
DS
= –10V, I
D
= –4.5A
37
52
50
4
3
6
8
72
m
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
–20
A
S
18
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= –10V, V
GS
= 0V,
f = 1MHz
750
155
130
1000
210
195
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= –5V, I
D
= –4.5A
V
GS
= –4.5V, R
GEN
= 6
6
12
ns
20 3
1
n
s
48
77
4
7
72
8
12
2
2
ns
ns
V
GS
= 0V to –4.5V
V
DD
= –5V
I
D
= –4.5A
nC
nC
nC
(Note 2)
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by user’s board design.
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage V
GS
= 0V, I
S
= –1.3A (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
–1.3
–1.2
36
20
A
V
ns
nC
–0.8
24
13
I
F
= –4.5A, di/dt = 100A/
μ
s
2:
Pulse Test: Pulse Width < 30
0
μ
s, Duty cycle < 2.0%.
a. 78°C/W when mounted on
a 1 in
pad of 2 oz copper on
FR-4 board.
b. 156°C/W when mounted on a
minimum pad of 2 oz copper.
相關(guān)PDF資料
PDF描述
FDC638 P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC638P P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDC6401N Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDC640P P-Channel 2.5V Specified PowerTrenchTM MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC638H 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述:
FDC638P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC638P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6
FDC638P_01 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
FDC638P_Q 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*