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參數(shù)資料
| 型號(hào)： | FDC638P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 240K |
| 代理商： | FDC638P |
June 1999
FDC638P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
Features
Absolute Maximum Ratings
Symbol Parameter
T
A
= 25°C unless otherwise note
Ratings
Units
V
DSS
Drain-Source Voltage
-20
V
V
GSS
Gate-Source Voltage - Continuous
±8
V
I
D
Drain Current - Continuous
(Note 1a)
-4.5
A
- Pulsed
-20
P
D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
FDC638P Rev.D
This P -Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
These devices are well suited for battery power applications: load
switching and power management, battery charging circuits, and
DC/DC conversion.
-4.5 A, -20 V. R
DS(ON)
= 0.045
@ V
GS
= -4.5 V
R
DS(ON)
= 0.065
@ V
GS
= -2.5 V.
Low gate charge (13nC typical).
High performance trench technology for extremely low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller than standard
SO-8); low profile (1mm thick).
SOIC-16
SOT-23
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
D
D
D
S
D
G
SuperSOT -6
.638
pin
1
3
5
6
4
1
2
1999 Fairchild Semiconductor
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC638P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC638P_Q | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638P-CUT TAPE | 制造商:FAIRCHILD 功能描述:20 V 48 mOhm P-Channel 2.5V PowerTrench Specified Mosfet SSOT-6 |
| FDC6392S | 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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