- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375769 > FDC640P (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 2.5V Specified PowerTrenchTM MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | FDC640P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrenchTM MOSFET |
| 中文描述： | 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 261K |
| 代理商： | FDC640P |
F
FDC640P, Rev.C
FDC640P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
August 2000
2000 Fairchild Semiconductor International
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Power Dissipation for Single Operation
-20
±
12
-4.5
-20
1.6
0.8
V
V
A
- Continuous
- Pulsed
(Note 1a)
P
D
(Note 1a)
W
(Note 1b)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
78
30
°
C/W
°
C/W
(Note 1)
Package Outlines and Ordering Information
Device Marking
.640
Device
FDC640P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
Features
-4.5 A, -20 V. R
DS(ON)
= 0.050
@ V
GS
= -4.5 V
R
DS(ON)
= 0.077
@ V
GS
= -2.5 V
Rugged gate rating (
±
12V).
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOT
TM
-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
3
5
6
4
1
2
D
D
D
S
D
G
SuperSOT -6
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages.
Applications
Load switch
Battery protection
Power management
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC6420 | 20V N & P-Channel PowerTrench MOSFETs |
| FDC6420C | 20V N & P-Channel PowerTrench MOSFETs |
| FDC642 | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| FDC642P | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| FDC6432SH | 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC640P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC640P_F095 | 功能描述:MOSFET 2.5V P-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC640P_NF073 | 制造商:Fairchild Semiconductor Corporation 功能描述:4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| FDC642 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| FDC6420 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N & P-Channel PowerTrench MOSFETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。