參數(shù)資料
型號： FDC6401N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 3000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-6
文件頁數(shù)： 1/5頁
文件大?。?/td> 76K
代理商： FDC6401N
October 2001
2001 Fairchild Semiconductor Corporation
FDC6401N Rev C (W)
FDC6401N
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This Dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
Applications
DC/DC converter
Battery Protection
Power Management
Features
3.0 A, 20 V.
R
DS(ON)
= 70 m
@ V
GS
= 4.5 V
R
DS(ON)
= 95 m
@ V
GS
= 2.5 V
Low gate charge (3.3 nC)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
D1
S2
G1
D2
S1
G2
SuperSOT -6
TM
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
20
±
12
3.0
12
0.96
0.9
0.7
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.401
FDC6401N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
相關(guān)PDF資料
PDF描述
FDC640P P-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6420 20V N & P-Channel PowerTrench MOSFETs
FDC6420C 20V N & P-Channel PowerTrench MOSFETs
FDC642 P-Channel 2.5V Specified PowerTrench⑩MOSFET
FDC642P P-Channel 2.5V Specified PowerTrench⑩MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6401N_NL 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6401N_Q 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC6401N-CUT TAPE 制造商:FAIRCHILD 功能描述:20V 70 mOhm Dual N-Ch 2.5V Specified PowerTrench Mosfet SSOT-6
FDC640P 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC640P_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET
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