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參數(shù)資料
| 型號： | FDC638APZ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 2.5V PowerTrench Specified MOSFET -20V, -4.5A, 43mohm |
| 中文描述： | 4.5 A, 20 V, 72 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT, 6 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 364K |
| 代理商： | FDC638APZ |
F
FDC638APZ Rev.B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
5
10
15
20
V
GS
=
-4.5V
V
GS
=
-3.5V
-
D
,
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= -2.0V
V
GS
= -1.5V
V
GS
=
-3.0V
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
5
10
15
20
0.6
1.0
1.4
1.8
2.2
V
GS
= -3.5V
V
GS
= -2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
N
D
-I
D
, DRAIN CURRENT(A)
V
GS
= -3.0V
V
GS
= -2.0V
V
GS
=
-4.5V
Normalized On-Resistance
Figure 3. Normalized On- Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
=-4.5A
V
GS
= -4.5V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
40
80
120
160
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= -2.2A
r
D
,
S
(
m
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
V
DD
= -5V
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
-
D
,
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
-
S
,
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC638H | 制造商:Fairchild Semiconductor Corporation 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| FDC638P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC638P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SUPERSOT-6 |
| FDC638P_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 2.5V PowerTrench Specified MOSFET |
| FDC638P_Q | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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