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參數(shù)資料
| 型號： | FDC6392S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 2200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 193K |
| 代理商： | FDC6392S |
April 2002
2002 Fairchild Semiconductor Corporation
FDC6392S Rev C(W)
FDC6392S
20V Integrated P-Channel PowerTrench
MOSFET and Schottky Diode
General Description
The FDC6392S combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in an SSOT-6 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
MOSFET:
–2.2 A, –20V. R
DS(ON)
= 150 m
@ V
GS
= –4.5V
R
DS(ON)
= 200 m
@ V
GS
= –2.5V
Low Gate Charge (3.7nC typ)
Compact industry standard SuperSOT
-6 package
Schottky:
VF < 0.45 V @ 1 A
D1
S2
G1
D2
S1
G2
SuperSOT -6
Pin 1
SuperSOT-6
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–20
±
12
–2.2
–6
0.96
0.9
0.7
–55 to +150
20
1
Units
V
V
A
W
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
V
RRM
I
O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
°
C
V
A
(Note 1a)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.392
FDC6392S
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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參數(shù)描述 |
|---|---|
| FDC6392S_Q | 功能描述:MOSFET 20V P-Ch PowerTrench Integrated RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6401N | 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6401N_NL | 功能描述:MOSFET Dual N-Ch 2.5V PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6401N_Q | 功能描述:MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6401N-CUT TAPE | 制造商:FAIRCHILD 功能描述:20V 70 mOhm Dual N-Ch 2.5V Specified PowerTrench Mosfet SSOT-6 |
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