- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375765 > FDB8860 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm PDF資料下載
參數(shù)資料
| 型號(hào)： | FDB8860 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm |
| 中文描述： | 31 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 261K |
| 代理商： | FDB8860 |
F
FDB8860 Re
v A
www.fairchildsemi.com
5
Figure 5.
1
10
0.1
1
10
100
1000
10us
10ms
DC
100ms
1ms
100us
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE(V)
60
LIMITED BY R
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
C
T
J
= MAX RATED
SINGLE PULSE
BY PACKAGE
CURRENT LIMITED
Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
C
apability
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
100
1000
10000
1
10
100
STARTING T
J
=
150
o
C
I
A
,
STARTING T
J
=
25
o
C
500
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
Figure 7.
1.5
2.0
2.5
3.0
3.5
0
20
40
60
80
T
J
= -55
o
C
T
J
= 25
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
= 7V
T
J
= 175
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Transfer Characteristics
Figure 8.
0.0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
120
V
GS
= 5V
V
GS
= 10V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
Saturation Characteristics
Figure 9.
Variation vs
Gate to Source Voltage
3
4
5
6
7
8
9
10
1.5
2.0
2.5
3.0
3.5
4.0
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE=0.5% MAX
R
D
,
(
m
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 40A
T
J
= 175
o
C
Drain to Source On-Resistance
Figure 10.
Resistance vs Junction Temperature
-80
-40
T
J
, JUNCTION TEMPERATURE
(
O
C
)
0
40
80
120
160
200
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 80A
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Normalized Drain to Source On
Typical Characteristics
T
J
= 25°C unless otherwise noted
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDB8870 | N-Channel PowerTrench MOSFET 30V, 160A, 3.9mW |
| FDB8874 | N-Channel PowerTrench MOSFET |
| FDB8876 | N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm |
| FDB8878 | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm |
| FDB8880 | N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB8860_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench㈢ MOSFET |
| FDB8860_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.6m |
| FDB8860_F085 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8870_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。