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參數(shù)資料
| 型號： | FDB8878 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm |
| 中文描述： | 48 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 226K |
| 代理商： | FDB8878 |
November 2005
F
2005 Fairchild Semiconductor Corporation
FDB8878 Rev. A
www.fairchildsemi.com
1
FDB8878
N-Channel Logic Level PowerTrench
MOSFET
30V, 48A, 14m
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 14m
, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 18m
, V
GS
= 4.5V, I
D
= 36A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
G
D
D
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
Pulsed (Note 4)
I
D
48
A
42
170
60
21
47.3
A
A
E
AS
Single Pulse Avalanche Energy (Note 1)
L = 1mH, I
AS
= 11A
L = 0.03mH,I
AS
= 38A
mJ
P
D
T
J
, T
STG
Power dissipation
Operating and Storage Temperature
W
o
C
-55 to 175
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 2)
3.7
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
43
Device Marking
FDB8878
Device
FDB8878
Package
TO-263
Reel Size
13”
Tape Width
24mm
Quantity
800 units
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|---|---|
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| FDB9403 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 40V, 110A, 1.2m?? |
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