參數(shù)資料
型號： FDB8876
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm
中文描述： 71 A, 30 V, 0.0103 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 1/6頁
文件大?。?/td> 264K
代理商： FDB8876
November 2005
F
2005 Fairchild Semiconductor Corporation
FDB8876 Rev. A
www.fairchildsemi.com
1
FDB8876
N-Channel PowerTrench
MOSFET
30V, 71A, 8.5m
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Features
r
DS(ON)
= 8.5m
, V
GS
= 10V, I
D
= 40A
r
DS(ON)
= 10.3m
, V
GS
= 4.5V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
G
D
S
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
I
D
71
A
65
A
A
Figure 4
180
70
-55 to 175
E
AS
P
D
T
J
, T
STG
mJ
W
o
C
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263,1in
2
copper pad area
2.14
o
C/W
o
C/W
43
Device Marking
FDB8876
Device
FDB8876
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB8878 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8880 功能描述:MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8896 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8896_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
FDB8896_F085 功能描述:MOSFET 30V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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