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參數(shù)資料
| 型號： | FDB8860 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm |
| 中文描述： | 31 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 261K |
| 代理商： | FDB8860 |
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FDB8860 Re
v A
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 1mA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
J
= 150°C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 5V
I
D
= 80A, V
GS
= 4.5V
I
D
= 80A, V
GS
= 10V,
T
J
= 175°C
1
-
-
-
1.7
1.6
1.9
2.1
3
V
R
ON)
Drain to Source On Resistance
2.3
2.6
2.7
m
-
2.5
3.6
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
9460
1710
1050
1.8
165
89
9.1
26
18
33
12585
2275
1575
-
214
115
12
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 80A
I
g
= 1.0mA
DS(
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (V
GS
= 10V, T
C
< 163
o
C)
Continuous (V
GS
= 5V, T
C
< 162
o
C)
Continuous (V
GS
= 10V, T
C
= 25
o
C, with
R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
80
A
80
31
A
A
A
Figure 4
947
306
2.04
-55 to +175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (Note 2)
Thermal Resistance Junction to Ambient TO-263,1in
2
copper pad area
0.49
62
43
o
C/W
o
C/W
o
C/W
Device Marking
FDB8860
Device
FDB8860
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800units
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|---|---|
| FDB8860_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench㈢ MOSFET |
| FDB8860_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level PowerTrench?? MOSFET 30V, 80A, 2.6m |
| FDB8860_F085 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8870_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
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