參數(shù)資料
型號: FDB8880
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 11 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁數(shù): 1/11頁
文件大?。?/td> 231K
代理商: FDB8880
2005 Fairchild Semiconductor Corporation
FDP8880 / FDB8880 Rev. A
February 2005
www.fairchildsemicom
F
1
FDP8880 / FDB8880
N-Channel PowerTrench
MOSFET
30V, 54A, 11.6m
Features
r
DS(ON)
= 14.5m
, V
GS
= 4.5V, I
D
= 40A
r
DS(ON)
= 11.6m
, V
GS
= 10V, I
D
= 40A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
Applications
DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
D
G
S
DRAIN
(FLANGE)
DRAIN
GATE
SOURCE
相關PDF資料
PDF描述
FDP8880 N-Channel PowerTrench MOSFET
FDB8896 N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm
FDC10-48S05W 10 watts of output power from a 2 x 1 x 0.4 inch package
FDC10 10 watts of output power from a 2 x 1 x 0.4 inch package
FDC10-12D05 10 watts of output power from a 2 x 1 x 0.4 inch package
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