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參數(shù)資料
| 型號(hào)： | FDB8870 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET 30V, 160A, 3.9mW |
| 中文描述： | 23 A, 30 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | FDB8870 |
2004 Fairchild Semiconductor Corporation
September 2004
FDB8870 Rev. A1
F
FDB8870
N-Channel PowerTrench
MOSFET
30V, 160A, 3.9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(ON)
and fast switching speed.
Applications
DC/DC converters
Features
r
DS(ON)
= 3.9m
, V
GS
= 10V, I
D
= 35A
r
DS(ON)
= 4.4m
, V
GS
= 4.5V, I
D
= 35A
High performance trench technology for extremely low
r
DS(ON)
Low gate charge
High power and current handling capability
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Note 1)
Continuous (T
C
= 25
o
C, V
GS
= 4.5V) (Note 1)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
160
A
150
23
A
A
A
mJ
W
W/
o
C
o
C
Figure 4
300
160
1.07
-55 to 175
E
AS
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-263
0.94
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient TO-263 ( Note 3)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
62
43
Device Marking
FDB8870
Device
FDB8870
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
D
G
S
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB8870_08 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET |
| FDB8870_10 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 30V, 160A, 3.9m?? |
| FDB8870_F085 | 功能描述:MOSFET 30V 160A 3.9Mohm N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8874 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB8876 | 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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