參數(shù)資料
型號: EDL5132CBMA-10-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
中文描述: 16M X 32 SYNCHRONOUS DRAM MODULE, 7 ns, PBGA90
封裝: LEAD FREE, FBGA-90
文件頁數(shù): 36/62頁
文件大?。?/td> 570K
代理商: EDL5132CBMA-10-E
EDL5132CBMA
Preliminary Data Sheet E0490E30 (Ver. 3.0)
36
Precharge Termination in WRITE Cycle
During a write cycle, the burst write operation is terminated by a precharge command. When the precharge
command is issued, the burst write operation is terminated and precharge starts. The same bank can be activated
again after tRP from the precharge command. To issue a precharge command, tRAS must be satisfied.
The write data written up to two clocks prior to the precharge command will be correctly stored. However, invalid
data may be written at the same clock as the precharge command and one clock before the precharge command.
To prevent this from happening, DQM must be high and mask the invalid data.
WRITE
CLK
T0
T2
T1
T3
T4
T5
T6
T7
Burst length = X, /CAS latency = 3
DQ
Command
D1
D2
D3
ACT
DQM
t
RP
t
DPL
PRE
Hi-Z
D5
T8
D4
(t
RAS
must be satisfied)
Precharge Termination in WRITE Cycle
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