參數(shù)資料
型號: EDL5132CBMA-10-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
中文描述: 16M X 32 SYNCHRONOUS DRAM MODULE, 7 ns, PBGA90
封裝: LEAD FREE, FBGA-90
文件頁數(shù): 13/62頁
文件大?。?/td> 570K
代理商: EDL5132CBMA-10-E
EDL5132CBMA
Preliminary Data Sheet E0490E30 (Ver. 3.0)
13
Command Operation
Extended Mode register set command (/CS, /RAS, /CAS, /WE, BA0 = Low, BA1 = High)
The Mobile RAM has an extended mode register that defines low power functions. In this command, A0 through A12
are the data input pins.
After power on, the extended mode register set command must be executed to fix low power functions.
The extended mode register can be set only when all banks are in idle state.
During tRSC following this command, the Mobile RAM can not accept any other commands.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0
BA1
Extended Mode register set command
Mode register set command (/CS, /RAS, /CAS, /WE, BA0, BA1 = Low)
The Mobile RAM has a mode register that defines how the device operates. In this command, A0 through A12 are
the data input pins. After power on, the mode register set command must be executed to initialize the device. The
mode register can be set only when all banks are in idle state. During tRSC following this command, the Mobile
RAM cannot accept any other commands.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0
BA1
Mode register set command
Activate command (/CS, /RAS = Low, /CAS, /WE = High)
The Mobile RAM has four banks, each with 8,192 rows. This command activates the bank selected by BA0 and BA1
and a row address selected by A0 through A12. This command corresponds to a conventional DRAM's /RAS falling.
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0, BA1
Row
Row
Activate command
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