參數(shù)資料
型號： EDL5132CBMA-10-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
中文描述： 16M X 32 SYNCHRONOUS DRAM MODULE, 7 ns, PBGA90
封裝： LEAD FREE, FBGA-90
文件頁數(shù)： 20/62頁
文件大小： 570K
代理商： EDL5132CBMA-10-E
EDL5132CBMA
Preliminary Data Sheet E0490E30 (Ver. 3.0)
20
Current state
/CS /RAS /CAS /WE Address
Command
Action
Notes
Read with auto
H
×
×
×
×
×
DESL
Continue burst to end
→
Precharging
Continue burst to end
→
Precharging
precharge
L
H
H
H
NOP
L
H
H
L
×
BST
READ/READA
ILLEGAL
L
H
L
H
BA, CA, A10
ILLEGAL
2
L
H
L
L
BA, CA, A10
WRIT/ WRITA
ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
×
REF
ILLEGAL
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
Write with auto
precharge
H
×
×
×
×
DESL
Continue burst to end
→
Write recovering
with auto precharge
L
H
H
H
×
NOP
Continue burst to end
→
Write recovering
with auto precharge
L
H
H
L
×
BST
READ/READA
ILLEGAL
L
H
L
H
BA, CA, A10
ILLEGAL
2
L
H
L
L
BA, CA, A10
WRIT/ WRITA
ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
×
REF
ILLEGAL
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
Precharging
H
×
×
×
×
DESL
Nop
→
Enter idle after tRP
L
H
H
H
×
NOP
Nop
→
Enter idle after tRP
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
2
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
Nop
→
Enter idle after tRP
L
L
L
H
×
REF
ILLEGAL
Row activating
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
H
×
×
×
×
DESL
Nop
→
Enter bank active after tRCD
L
H
H
H
×
NOP
Nop
→
Enter bank active after tRCD
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
2
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
2
L
L
H
H
BA, RA
ACT
ILLEGAL
2, 8
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
×
REF
ILLEGAL
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
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