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| 型號(hào)： | CS1311 |
| 文件頁(yè)數(shù)： | 14/25頁(yè) |
| 文件大?。?/td> | 542K |
| 代理商： | CS1311 |
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14
Revision 2.2
G
Signal Definitions
(Continued)
2.2.2
Memory Interface Signals
Signal Name
Ball
No.
Type
Description
MM_CLK0
Y10
O
SDRAM Output Clock (at 2x or 3x TRI_CLKIN frequency).
Two identi-
cal outputs are provided to reliably drive several small memory configu-
rations without external glue. A series terminating resistor close to
CS1301/CS1311 is required to reduce ringing.
For driving a 50
trace, a resistor of 27 to 33
is recommended. The
use of higher impedance traces in the SDRAM signals is not recom-
mended.
MM_CLK1
W10
MM_A[13:00]
See Table
2-3 on
page 12
O
Address Bus
. Used for row and column addresses.
WARNING: Do not connect MM_A[13:11] directly to SDRAM A[13:11]
pins. Refer to Chapter 12 SDRAM Memory System of the Philips Semi-
conductor
PNX1300 Series Media Processors Data Book
for accurate
connection diagrams.
MM_DQ[31:00]
See Table
2-3 on
page 12
I/O
32-Bit Data I/O Bus.
The Main Memory Interface module also supports
a 16-bit I/O interface.
MM_CKE0
Y19
O
Clock Enable Output to SDRAMs.
Two identical outputs are provided
in order to reliably drive several small memory configurations without
external glue.
MM_CKE1
U1
MM_CS0#
U2
O
Chip Select for DRAM rank n; active low.
The chip select pins may be
used as address pins to support the 256-Mbit SDRAM device organized
in x16.
MM_CS1#
U20
MM_CS2#
U3
MM_CS3#
U19
MM_RAS#
W14
O
Row Address Strobe; active low.
MM_CAS#
Y15
O
Column Address Strobe; active low.
MM_WE#
W15
O
Write Enable; active low
.
MM_DQM0
T19
O
Data Mask Enable.
These are byte-enable signals for the 32-bit
MM_DQ bus.
MM_DQM1
R18
MM_DQM2
V1
MM_DQM3
V4
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