參數(shù)資料
型號： BUW12W
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon diffused power transistors
中文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝： PLASTIC, TO-247, 3 PIN
文件頁數(shù)： 8/12頁
文件大?。?/td> 79K
代理商： BUW12W
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12W; BUW12AW
Fig.9
Collector-emitter saturation voltage as a
function of base current.
(1) I
C
= 3 A.
(2) I
C
= 6 A.
(3) I
C
= 8 A.
T
j
= 25
°
C; solid line: typical values; dotted line: maximum values.
handbook, halfpage
10
2
10
1
10
1
1
1
VCEsat
(V)
IB (A)
10
MGB872
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
handbook, halfpage
MBC096
2
10
2
10
1
1
10
10
2
10
1
IC (A)
hFE
VCE = 5 V
1V
Fig.11 Test circuit resistive load.
V
CC
= 250 V; t
p
= 20
μ
s; V
IM
=
6 to +8 V; t
p
/T = 0.01.
The values of R
B
and R
L
are selected in accordance with I
Con
and
I
Bon
requirements.
handbook, halfpage
MGE244
VCC
D.U.T.
RL
RB
VIM
tp
T
0
Fig.12 Switching time waveforms with
resistive load.
handbook, halfpage
MBB730
t
90%
10%
IB
IB on
IC on
ton
ts
tf
tr
toff
IB off
IC
90%
10%
t
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