參數(shù)資料
型號： BUW12W
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon diffused power transistors
中文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝： PLASTIC, TO-247, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 79K
代理商： BUW12W
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12W; BUW12AW
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT429 package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
2
base
collector; connected to
mounting base
emitter
3
Fig.1 Simplified outline (SOT429) and symbol.
MBK117
1
2
3
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW12W
BUW12AW
collector-emitter voltage
BUW12W
BUW12AW
collector-emitter saturation voltage
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
850
1000
V
V
V
CEO
open base
400
450
1.5
8
20
125
0.8
V
V
V
A
A
W
μ
s
V
CEsat
I
C
I
CM
P
tot
t
f
see Figs 7 and 9
see Figs 2 and 4
see Fig 2
T
mb
≤
25
°
C; see Fig.3
resistive load; see Figs 11 and 12
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-mb
thermal resistance from junction to mounting base
1
K/W
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