參數(shù)資料
型號(hào)： BUW12W
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： Silicon diffused power transistors
中文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝： PLASTIC, TO-247, 3 PIN
文件頁(yè)數(shù)： 4/12頁(yè)
文件大小： 79K
代理商： BUW12W
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12W; BUW12AW
Note
1.
Measured with a half-sinewave voltage (curve tracer).
Switching times resistive load
(see Figs 11 and 12)
t
on
turn-on time
BUW12W
BUW12AW
storage time
BUW12W
BUW12AW
fall time
BUW12W
BUW12AW
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
1
1
μ
s
μ
s
t
s
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
4
4
μ
s
μ
s
t
f
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Figs 13 and 14)
t
s
storage time
BUW12W
I
Con
= 6 A; I
B
= 1.2 A
I
Con
= 6 A; I
B
= 1.2 A;
T
j
= 100
°
C
I
Con
= 5 A; I
B
= 1 A
I
Con
= 5 A; I
B
= 1 A; T
j
= 100
°
C
1.6
1.8
2.1
2.3
μ
s
μ
s
BUW12AW
1.6
1.8
2.1
2.3
μ
s
μ
s
t
f
fall time
BUW12W
I
Con
= 6 A; I
B
= 1.2 A
I
Con
= 6 A; I
B
= 1.2 A;
T
j
= 100
°
C
I
Con
= 5 A; I
B
= 1 A
I
Con
= 5 A; I
B
= 1 A; T
j
= 100
°
C
80
140
150
300
ns
ns
BUW12AW
80
140
150
300
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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