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參數(shù)資料
| 型號(hào)： | BUW12W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | BUW12W |
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12W; BUW12AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW12W
BUW12AW
collector-emitter voltage
BUW12W
BUW12AW
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
V
BE
= 0
850
1000
V
V
V
CEO
open base
65
400
450
8
20
4
6
125
+150
150
V
V
A
A
A
A
W
°
C
°
C
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
see Figs 2 and 4
t
p
< 2 ms; see Fig.2
t
p
≤
2 ms
T
mb
≤
25
°
C; see Fig.3
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0;
BUW12W
BUW12AW
collector-emitter saturation voltage
BUW12W
L = 25 mH; see Figs 5 and 6
400
450
V
V
V
CEsat
I
C
= 6 A; I
B
= 1.2 A;
see Figs 7 and 9
I
C
= 5 A; I
B
= 1 A;
see Figs 7 and 9
1.5
V
BUW12AW
1.5
V
V
BEsat
base-emitter saturation voltage
BUW12W
BUW12AW
collector-emitter cut-off current
I
C
= 6 A; I
B
= 1.2 A; see Fig.7
I
C
= 5 A; I
B
= 1 A; see Fig.7
V
CE
= V
CESMmax
; V
BE
= 0;
note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA;
see Fig.10
V
CE
= 5 V; I
C
= 1 A; see Fig.10
1.5
1.5
1
V
V
mA
I
CES
3
mA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
10
18
10
35
mA
10
20
35
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