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參數(shù)資料
| 型號： | BUJD203AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor with integrated diode |
| 中文描述： | 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 200K |
| 代理商： | BUJD203AX |
BUJD203AX
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 September 2010
8 of 14
NXP Semiconductors
BUJD203AX
NPN power transistor with integrated diode
Fig 10. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 11. DC current gain as a function of collector
current; typical values
Fig 12. Test circuit for resistive load switching
Fig 13. Switching times waveforms for resistive load
001aab996
V
BEsat
(V)
I
C
(A)
10
1
10
1
0.6
0.8
0.2
0.4
1.0
1.2
1.4
0
001aab994
I
C
(A)
10
2
10
1
10
1
10
10
2
h
FE
1
V
CE
= 5 V
1 V
T
j
= 25
°
C
001aab989
t
p
R
B
V
IM
0
R
L
DUT
V
CC
T
001aab990
I
C
I
B
10 %
10 %
90 %
90 %
t
on
t
off
t
s
t
f
t
t
I
Bon
I
Boff
I
Con
t
r
≤
30 ns
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|---|---|
| BUJD203AX,127 | 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BU-JSB3100L | 制造商:Fuji Electric 功能描述: |
| BUK 9575-100A | 制造商:NXP Semiconductors 功能描述:Bulk |
| BUK100-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK100-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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