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參數(shù)資料
| 型號： | BUJD203AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor with integrated diode |
| 中文描述： | 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 200K |
| 代理商： | BUJD203AX |
BUJD203AX
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 September 2010
2 of 14
NXP Semiconductors
BUJD203AX
NPN power transistor with integrated diode
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
B
base
C
collector
E
emitter
n.c.
mounting base; isolated
Simplified outline
Graphic symbol
SOT186A (TO-220F)
3
2
1
mb
sym131
C
E
B
Table 3.
Type number
Ordering information
Package
Name
TO-220F
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BUJD203AX
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
CESM
V
CBO
V
CEO
I
C
Parameter
collector-emitter peak voltage
collector-base voltage
collector-emitter voltage
collector current
Conditions
V
BE
= 0 V
I
E
= 0 A
I
B
= 0 A
DC; see
Figure 1
; see
Figure 2
;
see
Figure 4
see
Figure 1
; see
Figure 2
; see
Figure 4
DC
Min
-
-
-
-
Max
850
850
425
4
Unit
V
V
V
A
I
CM
I
B
I
BM
P
tot
T
stg
T
j
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
-
-
-
-
-65
-
8
2
4
26
150
150
A
A
A
W
°C
°C
T
h
≤
25 °C; see
Figure 3
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|---|---|
| BUJD203AX,127 | 功能描述:兩極晶體管 - BJT NPN 425 V 4 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| BUK100-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK100-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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