參數(shù)資料
型號(hào)： BUJD203AX
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN power transistor with integrated diode
中文描述： 4 A, 425 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, TO-220, FULL PACK-3
文件頁(yè)數(shù)： 6/14頁(yè)
文件大?。?/td> 200K
代理商： BUJD203AX
BUJD203AX
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 27 September 2010
6 of 14
NXP Semiconductors
BUJD203AX
NPN power transistor with integrated diode
7.
Characteristics
[1]
Measured with half-sine wave voltage (curve tracer)
Table 7.
Symbol
Static characteristics
I
CES
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
collector-emitter cut-off current
V
BE
= 0 V; V
CE
= 850 V; T
j
= 125 °C
V
BE
= 0 V; V
CE
= 850 V; T
j
= 25 °C
V
CB
= 850 V; I
E
= 0 A
V
CE
= 425 V; I
B
= 0 A
V
EB
= 7 V; I
C
= 0 A
I
B
= 0 A; I
C
= 10 mA; L
C
= 25 mH;
see
Figure 6
; see
Figure 7
I
C
= 3 A; I
B
= 0.6 A; see
Figure 8
;
see
Figure 9
I
C
= 3 A; I
B
= 0.6 A; see
Figure 10
I
F
= 2 A; T
j
= 25 °C
I
C
= 1 mA; V
CE
= 5 V; T
h
= 25 °C;
see
Figure 11
I
C
= 500 mA; V
CE
= 5 V; T
h
= 25 °C;
see
Figure 11
I
C
= 2 A; V
CE
= 5 V; T
h
= 25 °C;
see
Figure 11
I
C
= 3 A; V
CE
= 5 V; T
h
= 25 °C;
see
Figure 11
[1]
-
-
-
-
-
-
450
2
1
1
0.1
10
-
mA
mA
mA
mA
mA
V
[1]
-
I
CBO
I
CEO
I
EBO
V
CEOsus
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
forward voltage
DC current gain
[1]
-
[1]
-
-
400
V
CEsat
-
0.29
1
V
V
BEsat
V
F
h
FE
-
-
10
0.99
1.04
15
1.5
1.5
32
V
V
13
21
32
11
16
22
-
12.5
-
Dynamic characteristics
t
on
turn-on time
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 12
; see
Figure 13
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 12
; see
Figure 13
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 25 °C; inductive load;
see
Figure 14
; see
Figure 15
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 14
; see
Figure 15
I
C
= 2.5 A; I
Bon
= 0.5 A; I
Boff
= -0.5 A;
R
L
= 75
; T
j
= 25 °C; resistive load;
see
Figure 12
; see
Figure 13
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 100 °C; inductive load;
see
Figure 14
; see
Figure 15
I
C
= 2 A; I
Bon
= 0.4 A; V
BB
= -5 V;
L
B
= 1 μH; T
j
= 25 °C; inductive load;
see
Figure 14
; see
Figure 15
-
0.52
0.6
μs
t
s
storage time
-
2.7
3.3
μs
-
1.2
1.4
μs
-
-
1.8
μs
t
f
fall time
-
0.3
0.35
μs
-
-
0.12
μs
-
0.03
0.06
μs
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