參數(shù)資料
型號: ATTINY26L-8PU
廠商: Atmel
文件頁數(shù): 17/169頁
文件大?。?/td> 0K
描述: IC MCU AVR 2K 5V 8MHZ 20-DIP
產(chǎn)品培訓(xùn)模塊: MCU Product Line Introduction
tinyAVR Introduction
標(biāo)準(zhǔn)包裝: 18
系列: AVR® ATtiny
核心處理器: AVR
芯體尺寸: 8-位
速度: 8MHz
連通性: USI
外圍設(shè)備: 欠壓檢測/復(fù)位,POR,PWM,WDT
輸入/輸出數(shù): 16
程序存儲器容量: 2KB(1K x 16)
程序存儲器類型: 閃存
EEPROM 大?。?/td> 128 x 8
RAM 容量: 128 x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 11x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 20-DIP(0.300",7.62mm)
包裝: 管件
產(chǎn)品目錄頁面: 612 (CN2011-ZH PDF)
配用: ATSTK600-RC08-ND - STK600 ROUTING CARD AVR
ATSTK600-ND - DEV KIT FOR AVR/AVR32
ATAVRISP2-ND - PROGRAMMER AVR IN SYSTEM
ATSTK505-ND - ADAPTER KIT FOR 14PIN AVR MCU
其它名稱: ATTINY26L-8PJ
ATTINY26L-8PJ-ND
113
1477K–AVR–08/10
ATtiny26(L)
Chip Erase
The Chip Erase will erase the Flash and EEPROM(1) memories plus Lock bits. The Lock bits are
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
1. The EEPROM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
Programming the
Flash
The Flash is organized in pages, see Table 52 on page 109. When programming the Flash, the
program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command "Write Flash"
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the address low byte.
C. Load Data Low Byte
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data low byte ($00 - $FF).
3. Give XTAL1 a positive pulse. This loads the data byte.
D. Load Data High Byte
1. Set BS1 to “1”. This selects high data byte.
2. Set XA1, XA0 to “01”. This enables data loading.
3. Set DATA = Data high byte ($00 - $FF).
4. Give XTAL1 a positive pulse. This loads the data byte.
E. Repeat B through D until the entire buffer is filled or until all data within the page is loaded.
While the lower bits in the address are mapped to words within the page, the higher bits address
the pages within the FLASH. This is illustrated in Figure 59 on page 114. Note that if less than 8
bits are required to address words in the page (pagesize < 256), the most significant bit(s) in the
address low byte are used to address the page when performing a page write.
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