參數(shù)資料
型號: AS4LC256K16E0-60JC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝: 0.400 INCH, PLASTIC, SOJ-40
文件頁數(shù): 21/24頁
文件大?。?/td> 660K
代理商: AS4LC256K16E0-60JC
AS4LC256K16EO
2/25/02; V.1.2
Alliance Semiconductor
P. 6 of 24
('2 SDJHPRGHF\FOH
Refresh cycle
Output enable
Self refresh cycle
Std
Symbol Parameter
-45
-50
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tPC
Read or write cycle time (fast page)
17
17
25
ns
14
tCAP
Access time from CAS precharge
21
21
23
ns
13
tCP
CAS precharge time (fast page)
5
5
6
ns
tPCM
EDO page mode RMW cycle
58
58
60
ns
tCRW
Page mode CAS pulse width (RMW)
46
46
50
ns
tRASP
RAS pulse width
45
75K
45
75K
60
75K
ns
Std
Symbol Parameter
-45
-50
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tCSR
CAS setup time (CAS-before-RAS)
10
10
10
ns
3
tCHR
CAS hold time (CAS-before-RAS)
8
8
10
ns
3
tRPC
RAS precharge to CAS hold time
0
0
0
ns
tCPT
CAS precharge time
(CAS-before-RAS counter test)
8–
8
8
ns
Std
Symbol Parameter
-45
-50
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tROH
RAS hold time referenced to OE
5–
5
5
ns
tOEA
OE access time
10
10
10
ns
tOED
OE to data delay
5
5
8
ns
tOEZ
Output buffer turnoff delay from OE
8
8
8
ns
8
tOEH
OE command hold time
8
8
8
ns
Std Symbol Parameter
-45
-50
-60
Unit
Notes
Min
Max
Min
Max
Min
Max
tRASS
RAS pulse width
(CBR self refresh)
100K
100K
100K
ns
tRPS
RAS precharge time
(CBR self refresh)
85
85
85
ns
tCHS
CAS hold time
(CBR self refresh)
30
30
30
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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