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參數(shù)資料
| 型號(hào)： | AS4LC256K16E0-60JC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-40 |
| 文件頁數(shù)： | 12/24頁 |
| 文件大小： | 660K |
| 代理商： | AS4LC256K16E0-60JC |
AS4LC256K16EO
2/25/02; V.1.2
Alliance Semiconductor
P. 2 of 24
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The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144
words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design
techniques resulting in high speed, extremely low power and wide operating margins at component and system levels.
The AS4LC256K16EO features a high speed page mode operation in which high speed read, write and read-write are performed
on any of the 512
× 16 bits defined by the column address. The asynchronous column address uses an extremely short row
address capture time to ease the system level timing constraints associated with multiplexed addressing. Very fast CAS to output
access time eases system design.
Refresh on the 512 address combinations of A0 to A8 during an 8 ms period is accomplished by performing any of the
following:
RAS-only refresh cycles
Hidden refresh cycles
CAS-before-RAS refresh cycles
Normal read or write cycles
Self refresh cycles
The AS4LC256K16EO is available in standard 40-pin plastic SOJ and 40/44-pin TSOP 2 packages compatible with widely
available automated testing and insertion equipment. System level features include single power supply of 3.3V
± 0.3V tolerance
and direct interface with TTL logic families.
Logic block diagram
Recommended operating conditions
(Ta = 0°C to +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
3.0
3.3
3.6
V
GND
0.0
V
Input voltage
VIH
2.0
–
VCC + 1
V
VIL
–1.0
–
0.8
V
REFRESH
CONTR
OLLE
R
512×512×16
ARRAY
(4,194,304)
SENSE AMP
A0
A1
A2
A3
A4
A5
A6
A7
VCC
GND
AD
DRES
SBUFF
ERS
A8
R
O
W
DE
CO
DE
R
COLUMN DECODER
RAS CLOCK
GENERATOR
SUBSTRATE
BIAS
GENERATOR
DATA
I/O
BUFFER
OE
RAS
UCAS
WE CLOCK
GENERATOR
WE
LCAS
I/O0 to I/O15
CAS CLOCK
GENERATOR
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC256K16E0-60TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
| AS4LC256K16EO | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-35 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-35TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-45TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
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