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參數(shù)資料
| 型號： | AS4LC256K16E0-60JC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 256K X 16 EDO DRAM, 60 ns, PDSO40 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-40 |
| 文件頁數(shù)： | 14/24頁 |
| 文件大?。?/td> | 660K |
| 代理商： | AS4LC256K16E0-60JC |
AS4LC256K16EO
2/25/02; V.1.2
Alliance Semiconductor
P. 21 of 24
CAS-before-RAS self refresh cycle
Typical DC and AC characteristics
W53
W5$66
W53&
W&3
W&+6
W&(=
5$6
8&$6
DQ
/&$6
W536
W&65
W53&
Supply voltage (V)
2.7
3.6
3.9
3.3
3.0
0.8
0.9
1.1
1.2
1.0
1.3
1.4
1.5
N
o
rm
al
ized
access
tim
e
Normalized access time t5$&
Ambient temperature (°C)
–55
80
125
35
–10
0.8
0.9
1.1
1.2
1.0
1.3
1.4
1.5
N
o
rm
al
ized
access
tim
e
Normalized access time t5$&
Load capacitance (pF)
50
200
250
150
100
30
40
60
70
50
80
90
100
Ty
pical
access
tim
e
Typical access time t5$&
vs. ambient temperature TD
vs. load capacitance C/
vs. supply voltage V&&
TD = 25°C
Supply voltage (V)
2.7
3.6
3.9
3.3
3.0
0.0
10
30
40
20
50
60
70
Suppl
y
cur
re
n
t(m
A)
Typical supply current I&&
Ambient temperature (°C)
–55
80
125
35
–10
0.0
10
30
40
20
50
60
70
Suppl
y
cur
re
n
t(m
A)
Typical supply current I&&
Cycle rate (MHz)
28
10
6
4
0.0
5
15
20
10
25
30
35
Pow
er
-o
n
c
u
rr
en
t(
m
A
)
Typical power-on current I32
vs. ambient temperature TD
vs. cycle rate 1/t5&
vs. supply voltage V&&
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC256K16E0-60TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM |
| AS4LC256K16EO | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-35 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-35TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
| AS4LC256K16EO-45TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO) |
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