參數(shù)資料
型號: AS4LC256K16E0-60JC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 256K X 16 EDO DRAM, 60 ns, PDSO40
封裝: 0.400 INCH, PLASTIC, SOJ-40
文件頁數(shù): 16/24頁
文件大?。?/td> 660K
代理商: AS4LC256K16E0-60JC
AS4LC256K16EO
2/25/02; V.1.2
Alliance Semiconductor
P. 23 of 24
Package dimensions
Capacitance
= 1 MHz, Ta = room temperature, VCC = 3.3V ± 0.3V)
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN1
A0 to A8
Vin = 0V
5
pF
CIN2
RAS, UCAS, LCAS, WE, OE
Vin = 0V
7
pF
I/O capacitance
CI/O
I/O0 to I/O15
Vin = Vout = 0V
7
pF
44-pin TSOP 2
Min
(mm)
Max
(mm)
A
1.2
A1
0.05
A2
0.95
1.05
b0.30
0.45
c
0.127 (typical)
D
18.28
18.54
E
10.03
10.29
He
11.56
11.96
e
0.80 (typical)
l
0.40
0.60
D
He
1
234
567
89 10
13 14
44 43 42 41 40 39 38 37 36 35
32 31
15 16
30 29
17 18 19 20
28 27 26 25
c
l
A1
A2
e
SLQ7623
0–5°
21
24
22
23
E
A
b
40-pin SOJ
400 mil
Min
Max
A
0.128
0.148
A1
0.026
-
A2
1.105
1.115
B
0.026
0.032
b
0.015
0.020
c
0.007
0.013
D
1.020
1.035
E
0.370 (typical)
E1
0.395
0.405
E2
0.435
0.445
e
0.050 (typical)
e
D
E1
Pin 1
b
B
A1
A2
c
E
6HDWLQJ
3ODQH
E2
A
SLQ 62-
相關(guān)PDF資料
PDF描述
AS5LC1008DJ-12/XT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-15/IT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-15/XT High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-20/IT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
AS5LC1008DJ-20/XT 128K x 8 SRAM High-Speed CMOS SRAM with 3.3V Revolutionary Pinout
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS4LC256K16E0-60TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 EDO Page Mode DRAM
AS4LC256K16EO 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-35TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)
AS4LC256K16EO-45TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 256K X 16 CMOS DRAM (EDO)