參數(shù)資料
型號： AM42BDS640AGBC9IS
廠商： SPANSION LLC
元件分類： 存儲器
英文描述： Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
中文描述： SPECIALTY MEMORY CIRCUIT, PBGA93
封裝： 8 X 11.60 MM, FBGA-93
文件頁數(shù)： 62/72頁
文件大?。?/td> 1064K
代理商： AM42BDS640AGBC9IS
64
Am42BDS640AG
November 1, 2002
P R E L I M INARY
SRAM AC CHARACTERISTICS
Figure 35.
SRAM Read Cycle
Notes:
1. WE# = VIH.
2. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device
interconnection.
Data Valid
High-Z
tRC
CS#1
Address
UB#, LB#
OE#
Data Out
tOH
tAA
tCO1
tBA
tOE
tOLZ
tBLZ
tLZ
tOHZ
tBHZ
tHZ
CS2
tCO2
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